- 单位：复旦大学 微电子学院
- 职称：教授，博导
- 职位：校教师教学发展中心副主任
- 性别：男
- 社会职务： IEEE EDS上海支会会长
- 微博：
个人简介
1995-2005年在复旦大学先后获得物理学学士、微电子学与固体电子学硕士和博士学位。2005年7月至今在复旦大学微电子学院任教。目前主要从事集成电路先进材料、工艺与器件研究，特别是集成电路MOS器件源漏栅接触技术方面的研究；先进铜互连技术，纳米新型器件研究；功率半导体器件研究；柔性器件研究；负责上海市精品课程《半导体物理》（微电子方向）和上海市重点课程《半导体器件原理》。
论文与著作
1. Zhong-Hua Li, Run-Ling Li, Yu-Long Jiang*, Yan-Wei Zhang, Yong-Feng Cao, and Xue-Jiao Wang, PerformanceImprovement by Blanket Boron Implant in the Sigma-Shaped Trench Before theEmbedded SiGe Source/Drain Formation for 28-nm PMOSFET, IEEE Electron Device Letters,41(6): 796~799, 2020.（封面推荐文章）
2. Meng-Ya Fan, Gai-Ying Yang, Guang-Nan Zhou,Yang Jiang, Wen-Mao Li, Yu-Long Jiang*,and Hong-Yu Yu, Ultra-Low Contact Resistivity of < 0.1 W· mm forAu-Free TixAly Alloy Contact on Non-Recessed i-AlGaN/GaN,IEEEElectron Device Letters, 41(1): 143~146, 2020.（封面文章）
3. Jian Zhang, Lin-Lin Wang, Hao Yu*,Merckling, Mols Clement, Vais Yves, Ramesh Abhitosh, Tsvetan Ivanov Siva, Marc Schaekers,Naoto Horiguchi, Dan Mocuta, Nadine Collaert, Kristin De Meyer, Yu-Long Jiang*, “EffectiveContact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 asContact”, IEEE Electron Device Letters, 2019, 40(11): 1800-1803.
4. Jian Zhang, Robert Sokolovskij, GanhuiChen, Yumeng Zhu, Yongle Qi, Xinpeng Lin, Wenmao Li, Guo-Qi Zhang, Yu-Long Jiang*, Hongyu Yu*,“Impact of high temperature H-2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2Sdetection”, Sensors and Actuators B: Chemical, 2019, 280: 138-143.
5. Zhong-Hua Li, Yu-Long Jiang*, Run-LingLi, Yan-Wei Zhang, Yong-Feng Cao, “Performance Improvement by Cold XePre-Amorphization Implant for Nickel Silicidation of 28-nm PMOSFET”, IEEEElectron Device Letters, 2019, 40(5): 777-779.
6. Yong-Feng Cao, M. Arsalan, J. Liu, Yu-Long Jiang*, J. Wan*,“A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensingin 22 nm FD-SOI Technology”, IEEE Electron Device Letters, 2019,40(5): 738-741.（封面文章）
7. Run-Ling Li, Lin-Lin Wang, Yu-Long Jiang*, “SignificantThreshold Voltage Shift Induced by Ge Penetration into PMOSFET Channel of 28-nmSRAM”, IEEE Electron Device Letters, 2019, 40(1): 87-90.
8. Lin-Lin Wang, Hao Yu, MarcSchaekers, Jean-Luc Everaert, Dan Mocuta, Naoto Horiguchi, Nadine Collaert,Kristin De Meyer, Yu-LongJiang*, “Improved Ohmic Performance by the Metallic BilayerContact Stack of Oxygen-incorporated La/Ultrathin TiSix on n-Si”, IEEETransactions on Electron Devices, 2018, 65(5):1869~1872.
9. Jian Zhang, Hao Yu, Lin-Lin Wang,Marc Schaekers, D. Mocuta, Naoto Horiguchi, Nadine Collaert, Kristin DeMeyer, Yu-Long Jiang*,“Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7Contact With Ultralow Contact Resistivity”, IEEE Electron Device Letters,2018.1.1, 39(1): 83~86.（封面推荐文章）
10. Lin-Lin Wang, Hao Yu, M. Schaekers,J. -L. Everaert, A. Franquet, B. Douhard, L. Date, J. del Agua Borniquel,K. Hollar, F. A. Khaja, W. Aderhold, A. J. Mayur, J. Y. Lee, H. van Meer,D. Mocuta, N. Horiguchi, N. Collaert, K. De Meyer, Yu-Long Jiang*, “Comprehensivestudy of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2contact resistivity achieved on Ga doped Ge using nanosecond laseractivation”, 2017 IEEE International Electron Devices Meeting (IEDM),2017.12.2-2017.12.6.
11. Lin-Lin Wang, Jian-Chi Zhang, Yu-Long Jiang*, “Optimizationof Ni(Pt)/Si-cap/SiGe Silicidation for pMOS Source/Drain Contact”, IEEETransactions on Electron Devices, 2017.5.1, 64(5): 2067~2071.
12. Hao Yu, Marc Schaekers, Jian Zhang,Lin-Lin Wang, Jean-Luc Everaert, Naoto Horiguchi, Yu-Long Jiang*, DanMocuta, Nadine Collaert, Kristin De Meyer, “TiSi(Ge) Contacts Formed at LowTemperature Achieving Around 2×10−9 Ω-cm2 Contact Resistivities top-SiGe”, IEEE Transactions on Electron Devices, 2017.2.1, 64(2): 500~506.
13. Lin-Lin Wang, Wu Peng, and Yu-Long Jiang*, “AModified 1/f Noise Model for MOSFETs With Ultra-Thin Gate Oxide”, IEEEElectron Device Letters, 2016, 37(5): 537~540.
14. Jian-Chi Zhang, Yu-Long Jiang*,Bing-Zong Li, “Thermal Stability Improvement Induced by Laser AnnealingFor 50-Å Ni(Pt) Film Silicidation”, IEEE Transactions on Electron Devices,63(2), pp. 751-754, 2016.
15. Jing-Hang Hu, Jian-chi Zhang,Zong-Yuan Fu, Jun-hui Weng, Wei-Bo Chen, Shi-Jin Ding*, Yu-Long Jiang*, and Guo-dongZhu*, “Fabrication of Electrically Bistable Organic Semiconducting/Ferroelectric Blend Films by Temperature Controlled Spin Coating”, ACSAppl. Mater. Interfaces, 7, 6325−6330, 2015.
16. Zong-Yuan Fu, Jian-Chi Zhang,Jun-Hui Weng, Wei-Bo Chen, Yu-LongJiang*, Shi-Jin Ding*, and Guo-Dong Zhu*,“Piezo response Force Microscopy Study on Ferroelectric Polarization of FerroelectricPolymer Thin Films with Various Structural Configurations. ”AIP Advances,5, p. 097211, 2015.
17. Lin-Lin Wang, Wu Peng, Yu-LongJiang*, Bing-Zong Li, “Effective Schottky Barrier Height Lowering by TiNCapping Layer for TiSix/Si Power Diode”, IEEE Electron Device Letters,36(6), pp. 597-599, 2015.
18. Jing-hang Hu, Jian-Chi Zhang,Zong-Yuan Fu, Yu-LongJiang*, Shi-Jin Ding*, Guo-Dong Zhu*, “Solvent Vapor Annealingof Ferroelectric P(VDF-TrFE) Thin Films,” ACS Appl. Mater. Interfaces,6(20), p. 18312, 2014.
19. Rong-Hong Chen, Yu-Long Jiang*, andBing-Zong Li, “Influence of Post-annealing on Resistivity of VOx Thin Film”, IEEEElectron Device Letters, 35(7), pp. 780-782, 2014.
20. Jian-chi Zhang, Yu-Long Jiang*,Guo-Dong Zhu, Guo-Ping Ru, and Bing-ZongLi, “Direct Observation of DipoleInfluence Induced by a Spin Coated Organic Interfacial Layer on Effective Schottky Barrier Height Modulation of Hg/Si Contact”, IEEE Electron Device Letters,35(2), pp. 262-264, 2014.
21. Long Li, Yu-Long Jiang*, andBing-Zong Li, “Ultrathin Ni(Pt)Si Film Formation Induced by Laser Annealing”,IEEEElectron Device Letters, 34(7), pp. 912-914, 2013.
22. Shao-Song Fu, Hao Yu, Yu-Long Jiang*, andGuo-Dong Zhu, “Ultraviolet irradiation induced polarization restorationin electrically fatigued ferroelectric polymer films”, J. Appl. Phys.,113, p. 114102, 2013.
23. Hao Yu, Qi Xie, Yu-Long Jiang*,Davy Deduytsche, and Christophe Detavernier,“Fermi Level Depinning Failurefor Al/GeO2/Ge Contacts”, ECS Solid State Lett., 1(5), pp. 79-81,2012.
24. Yu-Long Jiang*, QiXie, Xing-PingQu, David Wei Zhang, Davy Deduytsche, and Christophe Detavernier,“TaN/Ta as an Effective Diffusion Barrier for Direct Contact of Copper andNiSi”, Electrochem. Solid-State. Lett., 1(1), pp. H9-H13, 2012.
25. Shao-Song Fu, Hao Yu, Xiao-YaLuo, Yu-Long Jiang*,and Guo-Dong Zhu,“The Influence of Ultraviolet Irradiation on PolarizationFatigue in Ferroelectric Polymer Films”, IEEE Electron Device Letters, 33(1),pp. 95-97, 2012.
26. Yu-Long Jiang*, Qi Xie, Xing-PingQu, Guo-Ping Ru, David Wei Zhang, Davy Deduytsche, andChristophe Detavernier, “Effective Schottky Barrier Height Modulation byan Ultrathin Passivation Layer of GeOxNy for Al/n-Ge(100) Contact”,Electrochem. Solid-State. Lett., 14(12), pp. H487-H490, 2011.
27. Guo-Dong Zhu, Yan Gu, HaoYu,Shao-Song Fu, and Yu-Long Jiang*, “Polarizationfatigue in ferroelectric vinylidene fluorideand trifluoroethylene copolymer thin films”, J. Appl.Phys., 110, p. 024109,2011.
28. Quan-Li Li, Qi Xie, Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, David Wei Zhang, Davy Deduytsche,and Christophe Detavernier,“Annealing induced hysteresis suppressionfor TiN/HfO2/GeON/p-Ge capacitor”, Semicond. Sci. Technol., 26, p.125003, 2011.
29. Xiao Guo, Hao Yu, Yu-Long Jiang*, Guo-Ping Ru, David Wei Zhang, and Bing-Zong Li, “Study of nickelsilicide formation on Si(110) substrate”, App. Surf. Sci., 257, pp.10571– 10575, 2011.
30. Xiao-Rong Wang, Yu-Long Jiang*,QiXie, Christophe Detavernier, Guo-Ping Ru, Xing-Ping Qu, and Bing-Zong Li,“Annealing effect on the metal gate effective work function modulationfor the Al/TiN/SiO2/p-Si structure”, Microelectron. Eng., 88, p.573, 2011.
31. Yu-Long Jiang, Xin-PingQu*,Guo-Ping Ru, and Bing-Zong Li, “Schottky barrier height lowering induced by CoSi2 nanostructure”, Appl. Phys. A., 99, pp. 93–98,2010.
32. Yu-Long Jiang*, Guo-Ping Ru,Xing-Ping Qu, Bing-Zong Li, “X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions”, Appl. Surf. Sci., 256, pp.698–701, 2009.
33. Yu-Fei Huang, Yu-Long Jiang*, Guo-Ping Ru,and Bing-Zong Li, “Study of Ni/Si (1 0 0) solid-state reaction with Al addition”,Appl. Surf. Sci., 254, pp. 5631–5634, 2008.
34. Yu-Fei Huang, Yu-Long Jiang*,Guo-Ping Ru, Xing-Ping Qu, and Bing-ZongLi, “Study of Ni/Si(100)solid-state reaction with Y addition”, Microelectron. Eng., 85, pp.2013-2015, 2008.
35. Jia Luo, Yu-Long Jiang*, Guo-PingRu, Bing-Zong Li, and Paul KChu, “Silicidation of Ni(Yb) Film on Si(001)”,J. Electron. Material., 37, pp. 245-248, 2008.
36. Yu-Long Jiang*, Qi Xie, Christophe Detavernier, R. L. Van Meirhaeghe, Guo-Ping Ru,Xing-Ping Qu, Bing-Zong Li, Paul K Chu, “Growth of Pinhole Free YtterbiumSilicide Film by Solid-State Reaction on Si(001) with a Thin Amorphous SiInterlayer”, J. Appl. Phys., 102, p. 033508, 2007.
37. Yu-Long Jiang*, Jia Luo, Ye Yao, Fang Lu, Guo-Ping Ru, Xing-Ping Qu, and Bing-Zong Li,“Schottky contact barrier height extraction by admittance measurement”,J. Appl. Phys., 101, p. 053705, 2007.
38. Yu-Long Jiang*, Qi Xie, C. Detavernier, R. L. Van Meirhaeghe, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, An-Ping Huang, and Paul K Chu, “Oxidation suppression inytterbium silicidation by Ti/TiN bi-capping layer”, J. Vac. Sci. Technol.A, 25, pp. 285-289, 2007.
39. Yu-Long Jiang*,Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, C. Detavernier, R. L. Van Meirhaeghe, “Linear growth of Ni2Si thin film on n+/pjunction at low temperature”, J. Mater. Res., 21, pp.3017-3021,2006.
40. Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, Aditya Agarwal, John Poate, Khalid Hossain, and Wayne Holland, “Arsenic redistribution induced by low temperature Ni silicidation at 450oConshallow junctions”, J. Electron. Material. 35,pp.937-940, 2006.
41. Yu-Long Jiang*, Aditya Agarwal, Guo-Ping Ru, Gary Cai, and Bing-Zong Li, “Nickel silicide formation on shallow junctions”, Nucl. Instr. and Meth. Phys. Res. B,237, pp.160-166, 2005.
42. Yu-Long Jiang*, Guo-Ping Ru, Wei Huang, Xing-Ping Qu, Aditya Agarwal, YongLiu, Bing-ZongLi, Aditya Agarwal, Gary Cai, John Poate, C. Detavernier, andR. L. Van Meirhaeghe, “Electrical characterization of NiSi/Siinterfaces formed by a single and a two-step rapid thermal silicidation”, Semicond.Sci. Technol., 20, pp. 716-719, 2005.
43. Yu-Long Jiang*, Guo-Ping Ru,Jian-Hai Liu, Xing-Ping Qu, and Bing-Zong Li, “The reaction characteristics of ultra-thin Ni film on undoped and doped Si (100)”, J.Electron. Material, 33, pp. 770-773, 2004.
44. Yu-Long Jiang, Aditya Agarwal, Guo-Ping Ru*, Xing-Ping Qu, John Poate, Bing-Zong Li, and Wayne Holland, “Nickel silicidation on n and p-type junctions at 300oC”, Appl. Phys. Lett., 85, pp. 410-412, 2004.
45. Yu-Long Jiang, Guo-Ping Ru*, Fang Lu, Xing-Ping Qu, Bing-Zong Li, and Shi-Ning Yang,“Ni/Si solid phase reaction studied by temperature-dependentcurrent-voltage technique”, J. Appl. Phys., 93, pp. 866-870, 2003.
46. Yu-Long Jiang*, “Schottkybarrier height modulation for advanced source/drain contact”,Proceedingsof 19th Asia-Pacific workshop on fundamentals and applications ofadvanced semiconductor devices（2011年6月, 韩国大田）pp. 66-70. （Invited）
47. Yu-LongJiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, “OxidationSuppressionforYbSi2-x Formation and New Method to Extract SchottkyBarrier Height by Admittance Measurement”, Extended Abstracts ofthe7thInternational Workshop on Junction Technology (IWJT2007) (2007年6月, 日本京都)pp. 93-98.(Invited）
荣誉与奖励
复旦大学卓学计划教授，2010年度复旦大学教学成果奖一等奖第一完成人，复旦大学2011年度青年教师教学比赛一等奖，上海市2007年度青年科技启明星，教育部2008年度霍英东教育基金会资助项目获得者。
2003.02：首届GE基金会全国大学生技术创新竞赛“爱迪生杯”获得者；
2003.12：国际电子电气工程师协会电子器件分会全球研究生奖获得者（IEEE EDS Graduate Student Fellowship）；
2006.12：2005年度上海市优秀博士学位论文获得者；
2007.01：复旦微电子研究院优秀新员工奖；
2009.01：信息学院三等奖教金；
2010.01：信息学院二等奖教金；
2010.06：复旦大学教学成果奖一等奖，第一获奖人；
2011.01：复旦微电子研究院先进个人；
2011.06：信息学院优秀共产党员；
2011.12：复旦大学首届青年教师教学竞赛一等奖；
2012.05: 2011-2012年度“学生学术科技创新行动计划”优秀指导教师；
2012.07：信息学院2011年度本科教学先进个人；
2013.01：信息学院二等奖教金；
2014.06：上海市教学成果奖二等奖；
2016.07：复旦大学教学贡献奖；
2018.06：教育部在线教育研究中心“智慧教学之星”；
2018.09：复旦大学“十佳教师”；
2018.09：上海市教学成果奖二等奖；
2018.09：上海市教学成果奖一等奖；
2019.09：上海市育才奖；
2020.04：复旦大学“廖凯原最受欢迎教师奖”；
2020.06：复旦大学2020届本（专）科毕业生“我心目中的好老师”；