个人简介

1995-2005年在复旦大学先后获得物理学学士、微电子学与固体电子学硕士和博士学位。2005年7月至今在复旦大学微电子学院任教。目前主要从事集成电路先进材料、工艺与器件研究，特别是集成电路MOS器件源漏栅接触技术方面的研究；先进铜互连技术，纳米新型器件研究；功率半导体器件研究；柔性器件研究；负责上海市精品课程《半导体物理》（微电子方向）和上海市重点课程《半导体器件原理》。

论文与著作

1.    Zhong-Hua Li, Run-Ling Li, Yu-LongJiang*, Yan-Wei Zhang, Yong-Feng Cao, and Xue-Jiao Wang,PerformanceImprovement by Blanket Boron Implant in the Sigma-Shaped TrenchBefore theEmbedded SiGe Source/Drain Formation for 28-nm PMOSFET, IEEEElectron Device Letters,41(6): 796~799, 2020.（封面推荐文章）

2.      Meng-Ya Fan,Gai-Ying Yang, Guang-Nan Zhou,Yang Jiang, Wen-Mao Li, Yu-Long Jiang*,andHong-Yu Yu, Ultra-Low Contact Resistivity of < 0.1 W· mm forAu-Free Ti_xAl_y AlloyContact on Non-Recessed i-AlGaN/GaN,IEEEElectron Device Letters,41(1): 143~146, 2020.（封面文章）

3.      Jian Zhang,Lin-Lin Wang, Hao Yu*,Merckling, Mols Clement, Vais Yves, Ramesh Abhitosh,Tsvetan Ivanov Siva, Marc Schaekers,Naoto Horiguchi, Dan Mocuta, NadineCollaert, Kristin De Meyer, Yu-Long Jiang*, “EffectiveContactResistivity Reduction for Mo/Pd/n-In_0.53Ga_0.47 asContact”, IEEEElectron Device Letters, 2019, 40(11): 1800-1803.

4.      Jian Zhang, RobertSokolovskij, GanhuiChen, Yumeng Zhu, Yongle Qi, Xinpeng Lin, Wenmao Li, Guo-QiZhang, Yu-Long Jiang*, Hongyu Yu*,“Impact of high temperature H-2pre-treatment on Pt-AlGaN/GaN HEMT sensor for H₂Sdetection”, Sensorsand Actuators B: Chemical, 2019, 280: 138-143.

5.       Zhong-HuaLi, Yu-Long Jiang*, Run-LingLi, Yan-Wei Zhang, Yong-Feng Cao,“Performance Improvement by Cold XePre-Amorphization Implant for NickelSilicidation of 28-nm PMOSFET”, IEEEElectron Device Letters,2019, 40(5): 777-779.

6.       Yong-Feng Cao, M.Arsalan, J. Liu, Yu-Long Jiang*, J. Wan*,“A Novel One-TransistorActive Pixel Sensor With In-Situ Photoelectron Sensingin 22 nm FD-SOITechnology”, IEEE Electron Device Letters, 2019,40(5):738-741.（封面文章）

7.       Run-Ling Li,Lin-Lin Wang, Yu-Long Jiang*, “SignificantThreshold Voltage ShiftInduced by Ge Penetration into PMOSFET Channel of 28-nmSRAM”, IEEEElectron Device Letters, 2019, 40(1): 87-90.

8.      Lin-Lin Wang, HaoYu, MarcSchaekers, Jean-Luc Everaert, Dan Mocuta, Naoto Horiguchi, NadineCollaert,Kristin De Meyer, Yu-LongJiang*, “Improved OhmicPerformance by the Metallic BilayerContact Stack of Oxygen-incorporatedLa/Ultrathin TiSix on n-Si”, IEEETransactions on Electron Devices,2018, 65(5):1869~1872.

9.      Jian Zhang, HaoYu, Lin-Lin Wang,Marc Schaekers, D. Mocuta, Naoto Horiguchi, NadineCollaert, Kristin DeMeyer, Yu-Long Jiang*,“Thermal Stabilityof TiN/Ti/p+-Si_0.3Ge_0.7Contact With Ultralow ContactResistivity”, IEEE Electron Device Letters,2018.1.1, 39(1):83~86.（封面推荐文章）

10.   Lin-Lin Wang, Hao Yu, M. Schaekers,J. -L.Everaert, A. Franquet, B. Douhard, L. Date, J. del Agua Borniquel,K.Hollar, F. A. Khaja, W. Aderhold, A. J. Mayur, J. Y. Lee, H. van Meer,D.Mocuta, N. Horiguchi, N. Collaert, K. De Meyer, Yu-Long Jiang*,“Comprehensivestudy of Ga activation in Si, SiGe and Ge with 5 × 10⁻¹⁰ Ω·cm²contactresistivity achieved on Ga  doped Ge using nanosecondlaseractivation”, 2017 IEEE International Electron DevicesMeeting (IEDM),2017.12.2-2017.12.6.

11.    Lin-Lin Wang, Jian-Chi Zhang, Yu-LongJiang*, “Optimizationof Ni(Pt)/Si-cap/SiGe Silicidation for pMOSSource/Drain Contact”, IEEETransactions on Electron Devices,2017.5.1, 64(5): 2067~2071.

12.   Hao Yu, Marc Schaekers, Jian Zhang,Lin-LinWang, Jean-Luc Everaert, Naoto Horiguchi, Yu-Long Jiang*, DanMocuta,Nadine Collaert, Kristin De Meyer, “TiSi(Ge) Contacts Formed at LowTemperatureAchieving Around 2×10⁻⁹ Ω-cm2 Contact Resistivitiestop-SiGe”, IEEE Transactions on Electron Devices, 2017.2.1,64(2): 500~506.

13.   Lin-Lin Wang, Wu Peng, and Yu-LongJiang*, “AModified 1/f Noise Model for MOSFETs With Ultra-Thin GateOxide”, IEEEElectron Device Letters, 2016, 37(5): 537~540.

14.   Jian-Chi Zhang, Yu-LongJiang*,Bing-Zong Li, “Thermal Stability Improvement Induced by LaserAnnealingFor 50-Å Ni(Pt)  Film Silicidation”, IEEE Transactionson Electron Devices,63(2), pp. 751-754, 2016.

15.   Jing-Hang  Hu, Jian-chiZhang,Zong-Yuan Fu, Jun-hui Weng, Wei-Bo Chen, Shi-Jin Ding*, Yu-LongJiang*, and Guo-dongZhu*,  “Fabrication of Electrically BistableOrganic Semiconducting/Ferroelectric Blend Films by Temperature ControlledSpin Coating”, ACSAppl. Mater. Interfaces, 7, 6325−6330, 2015. 

16.   Zong-Yuan  Fu, Jian-Chi Zhang,Jun-HuiWeng, Wei-Bo Chen, Yu-LongJiang*, Shi-Jin Ding*, and Guo-DongZhu*,“Piezo response Force Microscopy Study on Ferroelectric Polarizationof FerroelectricPolymer  Thin Films with Various StructuralConfigurations. ”AIP Advances,5, p. 097211, 2015. 

17.   Lin-Lin  Wang, Wu Peng, Yu-LongJiang*, Bing-ZongLi, “Effective Schottky Barrier Height Lowering by TiNCapping Layer forTiSix/Si Power Diode”, IEEE Electron Device Letters,36(6),pp. 597-599, 2015.

18.   Jing-hang  Hu, Jian-ChiZhang,Zong-Yuan Fu, Yu-LongJiang*, Shi-Jin Ding*, Guo-Dong Zhu*,“Solvent Vapor Annealingof  Ferroelectric P(VDF-TrFE) Thin Films,” ACSAppl. Mater. Interfaces,6(20), p. 18312, 2014. 

19.   Rong-Hong Chen, Yu-LongJiang*, andBing-Zong Li, “Influence of Post-annealing on Resistivity of VOxThin Film”, IEEEElectron Device Letters, 35(7), pp. 780-782, 2014. 

20.   Jian-chi  Zhang, Yu-LongJiang*,Guo-Dong Zhu, Guo-Ping Ru, and Bing-ZongLi, “Direct Observationof DipoleInfluence Induced by a Spin Coated Organic Interfacial Layer onEffective Schottky Barrier Height Modulation of Hg/Si Contact”, IEEEElectron Device Letters,35(2), pp. 262-264, 2014.

21.   Long  Li, Yu-Long Jiang*,andBing-Zong  Li, “Ultrathin Ni(Pt)Si Film Formation Induced by LaserAnnealing”,IEEEElectron Device Letters, 34(7), pp.  912-914,2013.

22.   Shao-Song Fu, Hao Yu, Yu-LongJiang*, andGuo-Dong Zhu, “Ultraviolet irradiation induced polarizationrestorationin electrically fatigued ferroelectric polymer films”, J. Appl.Phys.,113, p. 114102, 2013. 

23.   Hao Yu, Qi Xie, Yu-LongJiang*,Davy Deduytsche, and Christophe Detavernier,“Fermi LevelDepinning Failurefor Al/GeO2/Ge Contacts”, ECS Solid State Lett.,1(5), pp. 79-81,2012. 

24.   Yu-Long Jiang*, QiXie, Xing-PingQu, David WeiZhang, Davy Deduytsche, and Christophe Detavernier,“TaN/Ta as an EffectiveDiffusion Barrier for Direct Contact of Copper andNiSi”, Electrochem.Solid-State. Lett., 1(1), pp. H9-H13, 2012. 

25.   Shao-Song Fu, Hao Yu,Xiao-YaLuo, Yu-Long  Jiang*,and Guo-Dong Zhu,“The Influence ofUltraviolet Irradiation on PolarizationFatigue in Ferroelectric PolymerFilms”, IEEE Electron Device Letters, 33(1),pp. 95-97, 2012. 

26.   Yu-Long Jiang*, Qi Xie, Xing-PingQu, Guo-Ping Ru,David Wei Zhang, Davy Deduytsche, andChristophe  Detavernier, “EffectiveSchottky Barrier Height Modulation byan Ultrathin Passivation Layer ofGeOxNy for Al/n-Ge(100) Contact”,Electrochem. Solid-State. Lett., 14(12), pp.H487-H490, 2011. 

27.   Guo-Dong  Zhu, Yan Gu,HaoYu,Shao-Song Fu, and Yu-Long Jiang*, “Polarizationfatiguein ferroelectric vinylidene fluorideand trifluoroethylene copolymer thinfilms”, J. Appl.Phys., 110, p. 024109,2011. 

28.   Quan-Li  Li, Qi Xie, Yu-LongJiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, David Wei Zhang, DavyDeduytsche,and  Christophe Detavernier,“Annealing induced hysteresissuppressionfor TiN/HfO2/GeON/p-Ge capacitor”, Semicond. Sci.Technol., 26, p.125003, 2011. 

29.   Xiao Guo, Hao Yu, Yu-LongJiang*, Guo-Ping Ru, David Wei Zhang, and Bing-Zong Li, “Study ofnickelsilicide formation on Si(110) substrate”, App. Surf. Sci., 257,pp.10571– 10575, 2011. 

30.   Xiao-Rong  Wang, Yu-LongJiang*,QiXie,  Christophe Detavernier, Guo-Ping Ru, Xing-Ping Qu, andBing-Zong Li,“Annealing effect  on the metal gate effective work functionmodulationfor the Al/TiN/SiO2/p-Si structure”, Microelectron.  Eng.,88, p.573, 2011. 

31.   Yu-Long Jiang, Xin-PingQu*,Guo-Ping Ru, andBing-Zong Li, “Schottky barrier height lowering induced by CoSi2nanostructure”, Appl.  Phys. A., 99, pp. 93–98,2010. 

32.   Yu-Long Jiang*, Guo-Ping Ru,Xing-Ping Qu, Bing-ZongLi, “X-ray photoelectron spectroscopy study of NiSi formation on shallowjunctions”, Appl. Surf. Sci., 256, pp.698–701, 2009. 

33.   Yu-Fei Huang, Yu-Long Jiang*,Guo-Ping Ru,and Bing-Zong Li, “Study of Ni/Si (1 0 0) solid-state reactionwith Al addition”,Appl. Surf. Sci., 254, pp. 5631–5634, 2008. 

34.   Yu-Fei Huang, Yu-Long Jiang*,Guo-Ping Ru,Xing-Ping Qu, and Bing-ZongLi, “Study of Ni/Si(100)solid-statereaction with Y addition”, Microelectron. Eng., 85, pp.2013-2015,2008. 

35.   Jia Luo, Yu-Long Jiang*,Guo-PingRu, Bing-Zong Li, and Paul KChu, “Silicidation of Ni(Yb) Film on Si(001)”,J.Electron. Material., 37, pp.  245-248, 2008. 

36.   Yu-Long Jiang*, Qi Xie, Christophe Detavernier, R.L. Van Meirhaeghe, Guo-Ping Ru,Xing-Ping  Qu, Bing-Zong Li, Paul K Chu,“Growth of Pinhole Free YtterbiumSilicide Film by Solid-State Reaction onSi(001) with a Thin Amorphous SiInterlayer”, J. Appl. Phys., 102, p. 033508,2007. 

37.   Yu-Long Jiang*, Jia Luo, Ye Yao, Fang Lu, Guo-PingRu, Xing-Ping Qu, and Bing-Zong Li,“Schottky contact  barrier heightextraction by admittance measurement”,J. Appl. Phys., 101, p. 053705,2007. 

38.   Yu-Long Jiang*, Qi Xie, C. Detavernier, R. L. VanMeirhaeghe, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, An-Ping Huang, andPaul K Chu, “Oxidation suppression inytterbium silicidation by Ti/TiNbi-capping layer”, J.  Vac. Sci. Technol.A, 25, pp. 285-289, 2007. 

39.   Yu-Long Jiang*,Guo-Ping  Ru, Xing-Ping Qu,Bing-Zong Li, C. Detavernier, R. L.   Van Meirhaeghe, “Lineargrowth of Ni2Si thin film on n+/pjunction at low temperature”, J. Mater.Res., 21, pp.3017-3021,2006. 

40.   Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu,Bing-Zong Li, Aditya Agarwal, John Poate, Khalid Hossain, and WayneHolland, “Arsenic redistribution induced by low temperatureNi silicidation at 450oConshallow junctions”, J. Electron. Material.35,pp.937-940, 2006. 

41.   Yu-Long Jiang*, Aditya Agarwal, Guo-Ping Ru, GaryCai, and Bing-Zong Li, “Nickel silicide formation on shallow junctions”,Nucl.  Instr. and Meth. Phys. Res. B,237, pp.160-166, 2005. 

42.   Yu-Long Jiang*, Guo-Ping Ru, Wei Huang, Xing-PingQu, Aditya Agarwal, YongLiu, Bing-ZongLi,  Aditya Agarwal, Gary Cai, JohnPoate, C.   Detavernier, andR.  L.  Van Meirhaeghe,“Electrical characterization of NiSi/Siinterfaces formed by a single and atwo-step rapid thermal silicidation”, Semicond.Sci. Technol., 20, pp.716-719, 2005. 

43.   Yu-Long Jiang*, Guo-Ping Ru,Jian-Hai Liu, Xing-PingQu, and Bing-Zong Li, “The reaction characteristics of ultra-thin Ni filmon undoped and doped Si (100)”, J.Electron. Material, 33, pp.770-773, 2004. 

44.   Yu-Long Jiang, Aditya Agarwal, Guo-Ping Ru*,Xing-Ping Qu, John Poate, Bing-Zong Li, and Wayne Holland, “Nickel silicidationon n and p-type junctions at 300oC”, Appl. Phys. Lett., 85, pp.410-412,  2004. 

45.   Yu-Long Jiang, Guo-Ping Ru*, Fang Lu, Xing-PingQu, Bing-Zong Li, and Shi-Ning Yang,“Ni/Si  solid phase reaction studiedby temperature-dependentcurrent-voltage technique”,  J. Appl. Phys., 93,pp. 866-870, 2003. 

46.   Yu-Long Jiang*, “Schottkybarrierheight modulation for advanced source/drain contact”,Proceedingsof 19thAsia-Pacific workshop on fundamentals and  applications ofadvancedsemiconductor devices（2011年6月, 韩国大田）pp. 66-70. （Invited） 

47.  Yu-LongJiang*,  Guo-Ping Ru,Xing-Ping Qu, Bing-Zong Li, “OxidationSuppressionforYbSi2-x Formation  andNew Method to Extract SchottkyBarrier Height by Admittance Measurement”,Extended Abstracts ofthe7thInternational  Workshop on Junction Technology(IWJT2007) (2007年6月, 日本京都)pp.  93-98.(Invited）

荣誉与奖励

复旦大学卓学计划教授，2010年度复旦大学教学成果奖一等奖第一完成人，复旦大学2011年度青年教师教学比赛一等奖，上海市2007年度青年科技启明星，教育部2008年度霍英东教育基金会资助项目获得者。

2003.02：首届GE基金会全国大学生技术创新竞赛“爱迪生杯”获得者；

2003.12：国际电子电气工程师协会电子器件分会全球研究生奖获得者（IEEE EDS GraduateStudent Fellowship）；

2006.12：2005年度上海市优秀博士学位论文获得者；

2007.01：复旦微电子研究院优秀新员工奖；

2009.01：信息学院三等奖教金；

2010.01：信息学院二等奖教金；

2010.06：复旦大学教学成果奖一等奖，第一获奖人；

2011.01：复旦微电子研究院先进个人；

2011.06：信息学院优秀共产党员；

2011.12：复旦大学首届青年教师教学竞赛一等奖；

2012.05:  2011-2012年度“学生学术科技创新行动计划”优秀指导教师；

2012.07：信息学院2011年度本科教学先进个人；

2013.01：信息学院二等奖教金；

2014.06：上海市教学成果奖二等奖；

2016.07：复旦大学教学贡献奖；

2018.06：教育部在线教育研究中心“智慧教学之星”；

2018.09：复旦大学“十佳教师”；

2018.09：上海市教学成果奖二等奖；

2018.09：上海市教学成果奖一等奖；

2019.09：上海市育才奖；

2020.04：复旦大学“廖凯原最受欢迎教师奖”；

2020.06：复旦大学2020届本（专）科毕业生“我心目中的好老师”；