目前主要研究领域：从事半导体材料和器件的可靠性、辐照效应及抗辐照加固研究。

主要从事半导体材料和器件的可靠性、辐照效应及抗辐照加固研究。四川大学物理科学与技术学院凝聚态专业博士。2012年-2013年在美国亚利桑那州立大学访问学者，与美国，加拿大，意大利，瑞士等多个国家的高校和研究机构建立了长期的合作关系。

主讲课程：专业必修课程《半导体材料及IC工艺原理》

          专业必修课程《毕业实习》

          专业选修课《微电子器件设计与工艺实验》

           研究生课程《微电子器件可靠性分析》

(1) Yao Ma, Gao Bo*, Min Gong, Maureen Willis, Zhimei Yang, Mingyue Guan, Yun Li. High Fluence Swift Heavy Ion Structure Modification of the SiO₂/Si Interface and Gate Insulator in 65nm MOSFETs. Nuclear Instruments and Methods in Physics Research B，396C(2017)：56-60。

(2) Yao Ma, Pengfei Xu, Mingyue Guan, Filippo Boi, Gao Bo*, Min Gong, Xue Wu,

Yuxin Wang, Hua Wang, ZengQiang Niao Analysis of deep level defects in bipolar junction transistors irradiated by 2 MeV electrons，Microelectronics Reliability 79 (2017) 149–152

(3) Yao Ma，Gao Bo*，Chang Chen，Xin Zhao，Zheng Qiang，Min Gong，Single wavelength oxygen saturation detection fusing optical absorption and scattering properites: a phantom study，spectroscopy and spcetral analysis 2017（37）: 2652-2656

(4) Zhimei Yang, Yun Li, Yao Ma*, Min Gong , Mingmin Huang , Bo Gao , Li lai，XTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy 209Bi ions irradiation Nuclear Inst. and Methods in Physics Research, B  2017（407）：304-309 (2)(5) Bo Gao, Yao Ma,* Yang Liu, Min Gong，Influence of the heterojunction spacer on the performance of AlGaN/GaN/AlGaN resonant tunneling diodes，IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 1, JANUARY 2017。(6) Yao Ma, Zhimei Yang*, Min Gong , Bo Gao, Yun Li , Wei Lin, Jinbo Li, Zhuohui Xia，Swift heavy ion irradiation induced electrical degradation in deca-nanometer MOSFETs，Nuclear Instruments and Methods in Physics Research B，383（2016）：160-163。

(7) 马瑶，龚敏*，刘鑫，胥鹏飞，林巍，冷宏强，重离子辐照SiO₂/Si结构变温光致发光谱研究，光散射学报，28（2016）：369-373。

(8) Yun Li, Ping Su, Zhimei Yang, Yao Ma, Min Gong，Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode，Nuclear Instruments and Methods in Physics Research B，388 (2016)：1–4。

(9) Zhimei Yang, Yao Ma^*, Xin Zhao, Yun Li, Bo Gao, Chang Chen, Min Gong, Compared Current-Voltage Characteristics of Silicon and Cubic Silicon Carbide pn-junction based on the Silicon Substrate，IEEE International nanoelectronics conference(INEC)2016, Chengdu, May9-11。

(10) Ketul Sutaria, Athul Ramkumar, Rongjun Zhu, Renju Rajveev, Yao Ma, Yu Cao^*. BTI-Induced Aging under Random Stress Waveforms: Modeling, Simulation and Silicon Validation，DAC '14, June 01-05 2014, San Francisco, CA, USA。

(11)高婷婷, 王玲, 苏凯, 马瑶, 袁菁, 龚敏，65nm n沟MOSFET的重离子辐照径迹效应研究，电子与封装，2013,5,(13): 27-30。

(12) 马瑶，龚敏*，马欢，贺端威，高温高压固态复分解反应发生长氮化镓的应变性质研究，光散射学报，23 (2011): 133-137。

(13) Su Ping, Gong Min, Ma Yao, Gao Bo, The hole concentration and strain relaxation of ultrathin GaMnAs film, 物理学报，2011,60(2): 576-581。