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职称：副教授
微电子专业英语
西安电子科技大学
主讲教师：刘琛，吕红亮，李聪，彭悦
教师团队：共4位
- 刘琛
- 吕红亮
- 李聪
- 彭悦
This course is an‘English for Microelectronics’course for senior undergraduate students of Microelectronics Science and Engineering and related majors. Its main content includes the technical English of semiconductor physics, physics of semiconductor devices, integrated circuit design and semiconductor technology. The purpose is to cultivate and improve students' ability to master basic microelectronics related technical terms, read English materials on microelectronics, and have a certain English communication and translation ability in the field of Microelectronics, which build the foundation for the study of Microelectronics related courses and the development of related scientific research work.
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| 学校： | 西安电子科技大学 |
| 开课院系： | 微电子学院 |
| 课程编号： | MI014007 |
| 学分： | 2 |
| 课时： | 32 |
| 课程章节 | | 文件类型 | | 大小 | | 备注 | |
| 1.1 What is semiconductor？ |
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480.31MB | ||
| 1.2 Classification of semiconductors |
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175.12MB | ||
| 1.3 Primitive Cell and Crystal Plane |
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366.89MB | ||
| 1.4 Band Model Effective Mass Theory |
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330.23MB | ||
| 1.5 Carrier Transport |
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286.35MB | ||
| 2.1 The pn Junction (I) Basic Structure of pn Junction |
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603.69MB | ||
| 2.2 The pn Junction (I) Current-Voltage Relationship of pn Junction |
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289.90MB | ||
| 2.3 The pn Junction (I) Energy Bands of pn Junction |
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440.01MB | ||
| 2.4 The pn Junction (I I) The breakdown of pn Junction |
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308.97MB | ||
| 2.5 Metal-Semiconductor Contacts Schottky Contacts under Bias |
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434.59MB | ||
| 2.6 Metal-Semiconductor Contacts Schottky Contacts in Equilibium |
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754.03MB | ||
| 2.7 The Bipolar Junction Transistor Contruction |
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430.56MB | ||
| 2.8 The Bipolar Junction Transistor (I)Early Effect |
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256.77MB | ||
| 2.9 The Bipolar Junction Transistor (I)Transistor Action |
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438.12MB | ||
| 2.10 The Bipolar Junction Transistor （II） Breakdown Voltage |
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597.26MB | ||
| 2.11 The Bipolar Junction Transistor (II)Frenquency Limits of BJTs |
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175.41MB | ||
| 2.12 Basics of MOSFETs General Characteristics of a MOSFET |
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672.09MB | ||
| 2.13 Basics of MOSFETs MOS system |
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493.51MB | ||
| 2.14 Basics of MOSFETs Threshold voltage |
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495.69MB | ||
| 2.15 Nonideal effects of MOSFETs Hot-carrier effect |
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410.39MB | ||
| 4.1 Title and Abstract |
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385.34MB | ||
| 4.2 Writing the introduction |
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282.57MB | ||
| 4.3 Experiment,data procession and discussions |
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340.83MB | ||
| 4.4 Additional supplyments |
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192.90MB | ||
| 4.5 Conclusions |
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270.26MB |